| Synthesis and Characterization of Cr-doped ZnS Semiconductor Nanostructured Thin Films Used for Multifunctional Optoelectronic and Spintronic Devices |
| Paper ID : 1077-ISCHU |
| Authors |
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Mohamed Emam-Ismail *1, Neama Essam2, Mohamed Ibrahim3, said Hussien moustafa4, Hany Hashem5, Esaam R Shaaban6, Magdy El-Hagry7 1Physics Department, Faculty of Science, Galala University, New Galala City, Suez, 43511, Egypt. 2Egypt, cairo, Helwan, Helwan Univesity, faculty of science 3Physics department- Faculty of science-Helwan University 4Physics Dep. Faculty of Science- Helwan University 5Physics Dept. -Faculty of Science- Helwan University 6Physics department, Faculty of Science, Al-Azhar University, 71452 Assuit, Egypt 7Physics dept. Faculty of Science, Helwan University |
| Abstract |
| This abstract reports the enhancement of the optoelectronic and spintronic properties of nanocrystalline Cr-doped ZnS thin films synthesized by the electron beam evaporation method. The structure and microstructural analysis revealed that the cubic structure of the synthesised film was fond, with the average crystallite size increasing from 6.201nm (x = 0.01) to 10.221 nm (x = 0.08). Optical measurements show that the Cr doping in ZnS caused the optical band gap to decrease due to the increase of defects. In addition, the refractive index n evaluated from the optical transmittance spectra using the Swanepoel method is found to increase with the increase in Cr doping level, owing to the increase in polarizability. The dispersive oscillator parameters, such as the single oscillator energy Eo, the dispersion energy Ed, the static refractive index n0 were calculated using the Wemple and DiDomenico (WDD) single oscillator models. The Non-linear optical parameters, third-order non-linear optical susceptibility c(3) and non-linear refractive index n2 are evaluated from dispersive oscillator parameters. The results show that the tenability of the optical band gap and dispersive oscillator parameters of Cr-doped ZnS films reflects the enhancement of the non-linear optical parameters, making them suitable for optoelectronic device applications. Finally, the magnetic measurement results show that the Cr-doped ZnS film has intrinsic room-temperature ferromagnetic behavior. These results indicate that Cr-doped ZnS film is effective for designing spintronic devices. In addition, photoluminescence and XPS techniques were used to deeply understand the physical properties of the Cr-doped ZnS. |
| Keywords |
| Thin film, Photoluminescience, XPS, |
| Status: Abstract Accepted (Poster Presentation) |