Characterization of ZnS doped Eu nanostructure thin films for Multifunctional Optoelectronic and Spintronic devices.
Paper ID : 1005-ISCHU
Authors
Said H. Moustafa *1, Magdy El-Hagary2, Neama Essam2, Esaam R Shaaban3
1Helwan
2Egypt, cairo, Helwan, Helwan Univesity, faculty of science
3Physics department, Faculty of Science, Al-Azhar University, 71452 Assuit, Egypt
Abstract
This work reports the enhancement of the optoelectronic and spintronic properties of nanocrystalline Eu-doped ZnS thin films synthesized by electron beam evaporation method. The structure and microstructural revealed the Hexagonal structure, and its average crystallite size changed from 11.20nm (x=0.01) to 13.5 nm (x=0.05). Optical band gap decreases by increasing the Eu doping ratio due to the increase of defects. In addition, the refractive index n evaluated from the optical transmittance spectra through Swanepoel method is increases with increasing Eu doping level, this attributed to the increase in the polarizability. The dispersive oscillator parameters such as the single oscillator energy Eo, the dispersion energy Ed, the static refractive index n0 were calculated by Wemple and DiDomenico (WDD) model. The Non-linear optical parameters; third-order non-linear optical susceptibility (3) and non-linear refractive index n2 are evaluated from dispersive oscillator parameters. The results show that the tunability of the optical band gap and dispersive oscillator parameters of Eu-doped ZnS films reflects the enhancement of the non-linear optical parameters, making it suitable for optoelectronic device applications. Finally, the magnetic measurements results show that the Eu-doped ZnS film has intrinsic room temperature ferromagnetic behavior. These results indicate that Eu-doped ZnS film is effective for designing spintronic devices.
Keywords
Diluted magnetic semiconductors; Nanocrystalline; microstructure properties; Optoelectronic; Spintronic; single oscillator parameters
Status: Abstract Accepted (Poster Presentation)